Abstract: The invention relates to a bi- or polynuclear metal complex of a metal of groups Vb/VIb/VIIb, or rather groups 5-7, having at least one ligand of the structure (a), wherein R1 and R2, independently of each other, can be oxygen, sulfur, selenium, NH, or N R4, wherein R4 is selected from the group containing alkyl or aryl and can be bonded to R3; and R3 is selected from the group containing alkyl, long-chain alkyl, alkoxy, long-chain alkoxy, cycloalkyl, haloalkyl, aryl, arylenes, haloaryl, heteroaryl, hete roarylenes, heterocycloalkylenes, heterocycloalkyl, haloheteroaryl, alkenyl, haloalkenyl, alkynyl, haloalkynyl, ketoaryl, haloketoaryl, ketoheteroaryl, ketoalkyl, haloketoalkyl, ketoalkenyl, haloketoalkenyl, wherein for suitable residues, one or more non -adjacent CH₂ groups can be replaced, independently of each other, with -O-, -S-, -NH-, -NR°-, -SiR°R°°-, -CO-, -COO-, -OCO-, -OCO-O-, -SO₂-, -S-CO-, -CO-S-, -CY1=CY2, or -C≡C- in such a way that O and/or S atom s are not bonded directly to each other, likewise optionally are replaced with aryl or heteroaryl preferably containing 1 to 30 C atoms, as a p-type doping agent for matrix materials of electronic components.

Abstract: The invention relates to an organic electron transport layer n-dopant, the use of said n-dopant to construct organic electronic components, transistors, organic light-emitting diodes, light-emitting electrochemical cells, organic solar cells, photodiodes , and electronic components containing said n-dopant.