Abstract: The invention relates to an organic electronic component (100) comprising at least one charge generation layer (5) which has an organically p-doped region (5a) that contains a zinc complex as a p-dopant, said zinc complex in turn containing at least one ligand L of the following structure: formula (I) wherein R1 and R2 can be oxygen, sulphur, selenium, NH or NR4 independently from one another, wherein R4 is selected from the group containing alkyl or aryl and which can be bonded to R3; and wherein R3 is selected from the group containing alkyl, long-chain alkyl, cycloalkyl, halogen alkyl, at least partially halogenated long-chain alkyl, halogen cycloalkyl, aryl, arylene, halogen aryl, heteroaryl, heteroarylene, heterocyclic alkylene, heterocycloalkyl, halogen heteroaryl, alkenyl, halogen alkenyl, alkynyl, halogen alkynyl, ketoaryl, halogen ketoaryl, ketoheteroaryl, ketoalkyl, halogen ketoalkyl, ketoalkenyl, halogen ketoalkenyl, halogen alkyl aryl, and halogen alkyl heteroaryl, wherein, for suitable gr oups, one or a number of non-adjacent CH₂ groups can be replaced by -O-, -S-, -NH-, -NR°°°-, -SiR°R°°-, -CO-, -COO-, -COR°OR°°-, -OCO-, -OCO-O-, -SO₂-, -S-CO-, -CO-S-, -O-CS-, -CS-O-, -CY1=CY2 or -C≡C- independently from one another, and in such a way that O and/or S atoms are not directly bonded to one another, and are replaced optionally with aryl- or heteroaryl preferably containing between 1 and 30 C atoms (terminal CH₃ groups are understood to be CH₂ groups in the sense of CH₂-H). The invention further relates to the use of a zinc complex as a p-dopant in charge generation layers.

Abstract: The invention relates to an organic electronic component having a matrix containing a zinc complex as a p-dopant, said zinc complex in turn containing at least one ligand L of the following structure: formula (I) wherein R1 and R2 can be oxygen, sulphur, selenium, NH or NR4 independently from one another, wherein R4 is selected from the group containing alkyl or aryl and which can be bonded to R3, and wherein R3 is selected from the group containing alkyl, long-chain alkyl, cycloalkyl, halogen-alkyl, ar yl, arylene, halogen-aryl, heteroaryl, heteroarylene, heterocyclic-alkylene, heterocycloalkyl, halogen-heteroaryl, alkenyl, halogen-alkenyl, alkynyl, halogen-alkynyl, ketoaryl, halogen-ketoaryl, ketoheteroaryl, ketoalkyl, halogen-ketoalkyl, ketoalkenyl, halogen-ketoalkenyl, halogen-alkyl-aryl, halogen-alkyl-heteroaryl, wherein, for suitable groups, one or a number of non-adjacent CH₂-groups can be replaced by -O-, -S-, -NH-, -NR°°°-, -SiR°R°°-, -CO-, -COO-, -COR°OR °°-, -OCO-, -OCO-O-, -SO₂-, -S-CO-, -CO-S-, -O-CS-, -CS-O-, -CY1=CY2 or -C≡C- independently from one another, and in such a way that O and/or S atoms are not directly bonded to one another, and are replaced optionally with aryl- o r heteroaryl preferably containing between 1 and 30 C atoms (terminal CH₃ -groups are understood to be CH₂ -groups in the sense of CH₂ -H).

Abstract: The invention relates to a method for producing an organic electronic component, wherein the component comprises at least one organic electronic layer having a matrix, wherein the matrix contains a metal complex as a dopant, which metal complex comprises at least one metal atom M and at least one ligand L bonded to the metal atom M, wherein the ligands L have the following structure independently of each other: wherein E1 and E2 can be oxygen, sulfur, selenium, NH, or NR' independently of each other, wh erein R' is selected from the group containing alkyl or aryl and can be bonded to the substituted benzene ring of the ligand L; and the substituents R1 are selected independently of each other from the group comprising branched or unbranched, fluorinated aliphatic hydrocarbons having 1 to 10 C atoms, wherein n = 1 to 5; and the substituents R2 are selected independently of each other from the group comprising -CN, branched or unbranched aliphatic hydrocarbons having 1 to 10 C atoms, aryl, and heteroaryl , wherein m = 0 to at most 5 - n; wherein the deposition of the dopant of the at least one organic electronic layer occurs by means of gas-phase deposition by use of a source, wherein the source is designed in such a way that the dopant experiences impac ts with at least one wall of the source.