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85 Publications:

2013..

14

7

..2026

587 Citations*:

2015..

162

81

..2026

h = 13 / i10 = 20

96 Co-Authors:

Alibart F. (40)
Coffinier Y. (31)
Guérin D. (24)
Scholaert C. (18)
Ghazal M. (18)
Lmimouni K. (17)
Janzakova K. (16)
Vuillaume D. (13)
Kumar A. (12)
Halliez S. (11)
Schmid G. (11)
Baron A. (10)
Dargent T. (8)
Hafsi B. (7)
Buée L. (7)
Colin M. (7)
Susloparova A. (7)
Bourguiga R. (6)
Ferchichi K. (6)
Maltenberger A. (6)
Moustiez P. (5)
Routier L. (5)
Boubaker A. (5)
Boujnah A. (5)
Kalboussi A. (5)
Daher Mansour M. (5)
Hernández-Balaguera E. (4)
Lefebvre C. (4)
Barois N. (4)
Janel S. (4)
Kessler F. (4)
Toledo Nauto M. (3)
Balafrej I. (3)
Rouat J. (3)
Cerveaux A. (3)
Foulon P. (3)
Horlac'h T. (3)
Louis G. (3)
Westrelin A. (3)
Yger P. (3)
Crljen Ž. (3)
Lončarić I. (3)
Zlatić V. (3)
Lenfant S. (3)
Regensburger S. (3)
Halik M. (3)
Benfenati V. (3)
Bonetti S. (3)
Borrachero Conejo A. I. (3)
Generali G. (3)
Muccini M. (3)
Toffanin S. (3)
Drouin D. (2)
Garg N. (2)
Haj Ammar W. (2)
Çağatay Tarhan M. (2)
Pentlehner D. (2)
Caprini M. (2)
Grishin I. (2)
Karges S. (2)
Natali M. (2)
Pistone A. (2)
Quiroga S. D. (2)
Wemken J. H. (2)
Gasse C. (1)
Gourdel M.-E. (1)
Kanso H. (1)
Kenne S. (1)
Le Cacher de Bonneville B. (1)
Morchain C. (1)
Rain J.-C. (1)
Reverdy C. (1)
Saadi P.-L. (1)
Vercoutere E. (1)
Dumortier C. (1)
Ghodhbane N. (1)
Melot A. (1)
de Maistre A. (1)
Oumekloul Z. (1)
Pernod P. (1)
Talbi A. (1)
Arscott S. (1)
Begard S. (1)
Pallecchi E. (1)
Thomy V. (1)
Athanasiou V. (1)
Konkoli Z. (1)
Przyczyna D. (1)
Szaciłowski K. (1)
Blanchard P. (1)
Mastropasqua Talamo M. (1)
Roncali J. (1)
>> Jaeger A. (1)
Petrukhina M. A. (1)
Mercuri F. (1)
Kanitz A. (1)

1 Years [Jaeger A.]:

2026
2025
2024
2023
2022
2021
2020
2019
2018
2017
2016 (1)
2015
2014
2013

A' B' O' P' T'
1 w/ Arndt Jaeger
[A1/A1'] Wide Band-Gap Bismuth-based p-Dopants for Opto-Electronic Applications | Angew. Chem. Int. Ed. 55(35), 10493━10497 (2016) Bismut-haltige p-Dotanden mit großer Bandlücke für optoelektronische Anwendungen | Angew. Chem. 128(35), 10649-10653 (2016) [IF2016 = 11.994; 14 cit.] bib

Abstract: Ten new efficient p-dopants for conductivity doping of organic semiconductors for OLEDs are identified. The key advantage of the electrophilic tris(carboxylato) bismuth(III) compounds is the unique low absorption of the resulting doped layers which promo tes the efficiency of OLED devices. The combination of these features with their low fabrication cost, volatility, and stability, make these materials very attractive as dopants in organic electronics.

2026 | 2025 | 2024 | 2023 | 2022 | 2021 | 2020 | 2019 | 2018 | 2017 | 2016

Pecqueur S., Maltenberger A., Petrukhina M. A., Halik M., Jaeger A., Pentlehner D., Schmid G.*

© 2019-2026 Sébastien Pecqueur