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76 Publications:

2013..

14

7

..2025

443 Citations*:

2015..

135

68

..2025

h = 12 / i10 = 16

96 Co-Authors:

Alibart F. (35)
Coffinier Y. (26)
Guérin D. (19)
Ghazal M. (18)
Lmimouni K. (16)
Janzakova K. (15)
Scholaert C. (13)
Vuillaume D. (13)
Kumar A. (12)
Halliez S. (11)
Schmid G. (11)
Dargent T. (8)
Buée L. (7)
Colin M. (7)
Susloparova A. (7)
Hafsi B. (6)
>> Bourguiga R. (6)
Ferchichi K. (6)
Maltenberger A. (6)
Baron A. (5)
Boubaker A. (5)
Boujnah A. (5)
Kalboussi A. (5)
Daher Mansour M. (5)
Routier L. (4)
Lefebvre C. (4)
Barois N. (4)
Janel S. (4)
Kessler F. (4)
Cerveaux A. (3)
Foulon P. (3)
Horlac'h T. (3)
Louis G. (3)
Westrelin A. (3)
Yger P. (3)
Crljen Ž. (3)
Lončarić I. (3)
Zlatić V. (3)
Lenfant S. (3)
Regensburger S. (3)
Halik M. (3)
Benfenati V. (3)
Bonetti S. (3)
Borrachero Conejo A. I. (3)
Generali G. (3)
Muccini M. (3)
Toffanin S. (3)
Toledo Nauto M. (2)
Hernández-Balaguera E. (2)
Balafrej I. (2)
Drouin D. (2)
Rouat J. (2)
Garg N. (2)
Haj Ammar W. (2)
Çağatay Tarhan M. (2)
Pentlehner D. (2)
Caprini M. (2)
Grishin I. (2)
Karges S. (2)
Natali M. (2)
Pistone A. (2)
Quiroga S. D. (2)
Wemken J. H. (2)
Gasse C. (1)
Gourdel M.-E. (1)
Kanso H. (1)
Kenne S. (1)
Le Cacher de Bonneville B. (1)
Morchain C. (1)
Rain J.-C. (1)
Reverdy C. (1)
Saadi P.-L. (1)
Vercoutere E. (1)
Moustiez P. (1)
Dumortier C. (1)
Ghodhbane N. (1)
Melot A. (1)
de Maistre A. (1)
Oumekloul Z. (1)
Pernod P. (1)
Talbi A. (1)
Arscott S. (1)
Begard S. (1)
Pallecchi E. (1)
Thomy V. (1)
Athanasiou V. (1)
Konkoli Z. (1)
Przyczyna D. (1)
Szaciłowski K. (1)
Blanchard P. (1)
Mastropasqua Talamo M. (1)
Roncali J. (1)
Jaeger A. (1)
Petrukhina M. A. (1)
Mercuri F. (1)
Kanitz A. (1)

4 Years [Bourguiga R.]:

2025
2024
2023
2022
2021 (3)
2020 (1)
2019 (1)
2018 (1)
2017
2016
2015
2014
2013

A' B' O' P' T'
6 w/ Ramzi Bourguiga
 id
[P6] Organic doped diode rectifier based on Parylene-electronic beam lithogrpahy process for Radio frequency applications | 10th Int'l Conf. on Molecular Electronics 2021 (elecMol 2021), PO33 - T3, Lyon/France - Nov. 29, 2021 ( abstract) bib

Abstract: We have adapted a "peel-off" process to structure stacked organic semiconductors (conducting polymers or small molecules) and metal layers for diode microfabrication. The fabricated devices are organic diode rectifier in a coplanar waveguide structure. U nlike conventional lithographic process, this technique does not lead to destroy organic active layers since it does not involve harsh developer or any non-orthogonal solvent that alter the functionality of subsequentially deposited materials. This proce ss also involves recently reported materials, as a p-dopant of an organometallic electron acceptor Copper(II) trifluoromethanesulfonate, that play the role of hole injection layer in order to enhance the performances of the diode. Comparatively to self-a ssembled monolayers based optimized structures, the fabricated diodes show higher reproducibility and stability. High rectification ratio for realized pentacene and poly(3-hexylthiophene) diodes up to 10^6 has been achieved. Their high frequency response has been evaluated by performing theoretical simulations. The results predict operating frequencies of 200 MHz and 50 MHz for pentacene and P3HT diode rectifiers respectively, with an input oscillating voltage of 2 V peak-to-peak, promising for RFID dev ice applications or for GSM band energy harvesting in low-cost IoT objects.

Ferchichi K., Pecqueur S., Guérin D., Bourguiga R., Lmimouni K.

[A13] High rectification ratio in polymer diode rectifier through interface engineering with Self-Assembled Monolayer | Electron. Mater. 2(4), 445━453 (2021) [IF = --; 11 cit.] bib hal

Abstract: In this work, we demonstrate P3HT (poly 3-hexylthiophene) organic rectifier diode both in rigid and flexible substrate with a rectification ratio up to 106. This performance has been achieved through tuning the work function of gold with a self-assembled monolayer of 2,3,4,5,6-pentafluorobenzenethiol (PFBT). The diode fabricated on flexible paper substrate shows a very good electrical stability under bending tests and the frequency response is estimated at more than 20 MHz which is sufficient for radio frequency identification (RFID) applications. It is also shown that the low operating voltage of this diode can be a real advantage for use in a rectenna for energy harvesting systems. Simulations of the diode structure show that it can be used at GSM an d Wi-Fi frequencies if the diode capacitance is reduced to a few pF and its series resistance to a few hundred ohms. Under these conditions, the DC voltages generated by the rectenna can reach a value up to 1 V.

2025 | 2024 | 2023 | 2022 | 2021

Ferchichi K.*, Pecqueur S., Guérin D., Bourguiga R., Lmimouni K.

[A11] Organic doped diode rectifier based on Parylene-electronic beam lithography process for Radio frequency applications | Org. Electron. 97, 106266 (2021) [IF2021 = 3.868; 7 cit.] bib hal

Abstract: We have adapted a "peel-off" process to structure stacked organic semiconductors (conducting polymers or small molecules) and metal layers for diode microfabrication. The fabricated devices are organic diode rectifier in a coplanar waveguide structure. U nlike conventional lithographic process, this technique does not lead to destroy organic active layers since it does not involve harsh developer or any non-orthogonal solvent that alter the functionality of subsequentially deposited materials. This proce ss also involves recently reported materials, as a p-dopant of an organometallic electron-acceptor Copper (II) trifluoromethanesulfonate, that play the role of hole injection layer in order to enhance the performances of the diode. Comparatively to self- assembled monolayers based optimized structures, the fabricated diodes show higher reproducibility and stability. High rectification ratio for realized pentacene and poly (3-hexylthiophene) diodes up to 106 has been achieved. Their high frequency respons e has been evaluated by performing theoretical simulations. The results predict operating frequencies of 200 MHz and 50 MHz for pentacene and P3HT diode rectifiers respectively, with an input oscillating voltage of 2 V peak-to-peak, promising for RFID de vice applications or for GSM band energy harvesting in low-cost IoT objects.

2025 | 2024 | 2023 | 2022 | 2021

Ferchichi K.*, Pecqueur S., Guérin D., Bourguiga R., Lmimouni K.

[A9] Concentration-control in all-solution processed semiconducting polymer doping and high conductivity performances | Synth. Met. 262, 116352 (2020) [IF2020 = 3.266; 11 cit.] bib arXiv hal

Abstract: Simultaneously optimizing performances, processability and fabrication cost of organic electronic materials is the continual source of compromise hindering the development of disruptive applications. In this work, we identified a strategy to achieve reco rd conductivity values of one of the most benchmarked semiconducting polymers by doping with an entirely solution-processed, water-free and cost-effective technique. High electrical conductivity for poly(3-hexylthiophene) up to 21 S/cm has been achieved, using a commercially available electron acceptor as both a Lewis acid and an oxidizing agent. While we managed water-free solution-processing a three-time higher conductivity for P3HT with a very affordable/available chemical, near-field microscopy reve als the existence of concentration-dependent higher-conductivity micro-domains for which furthermore process optimization might access to even higher performances. In the perpetual quest of reaching higher performances for organic electronics, this work shall greatly unlock applications maturation requiring higher-scale processability and lower fabrication costs concomitant of higher performances and new functionalities, in the current context where understanding the doping mechanism of such class of ma terials remains of the greatest interest.

2025 | 2024 | 2023 | 2022 | 2021 | 2020

Ferchichi K., Bourguiga R., Lmimouni K., Pecqueur S.*

[O9] Organic rectifier diode with very low turn-on voltage for RF Energy harvesting in Smart Textiles Applications | Télécom 2019 & 11èmes JFMMA, Saïda/Marocco - June 12, 2019 ( program) bib

Abstract:

Ferchichi K., Pecqueur S., Guérin D., Bourguiga R., Lmimouni K.

[O6] Organic rectifier diode with very low turn-on voltage for RF Energy harvesting in Smart Textiles Applications | 2018 SPIE Optics + Photonics 2018, San Diego/USA - Aug. 19, 2018 ( proceeding) bib

Abstract: Organic diode rectifier have attracted a lot of attention recently for RF energy harvesting, and much effort has been applied toward extending the ultra-high frequency range. An important parameter that should be considered for diodes used in RF rectifie r is the turn on voltage, which should be low to overcome the problem of the low voltage generated and power extracted from energy harvesting. In this work, we focused on pentacene organic rectifier with high rectification ratio and low threshold voltage obtained by tuning the work function of gold with a self-assembled monolayer of PFBT and optimizing the thickness of the organic layer. We demonstrate a high rectification ratio up to 107 and a very low turn on voltage as low as 20 mV. Flexible rectifie r diode have been also fabricated in release paper WO84, high rectification ratio of 106 was obtained even after bending of the device. The pentacene based rectifier diodes were also demonstrated to operate at more than 1GHz. This provides a great potent ial for fabricating high-performance organic flexible diodes and opens the way for the development of high frequency response using organic materials.

Ferchichi K., Pecqueur S., Guérin D., Bourguiga R., Lmimouni K.

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